Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G16RC-062E IT:B | Dynamic random access memory | DEX lost NXP:LPC1765FBD100K

NXP:LPC1765FBD100K

Red light optical technology

Nichicon ALUMINUM ELECTROLYTIC CAPACITOR

Burst Mode® operation enables ultralow standby current consumption

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G16RC-062E IT:B | Dynamic random access memory | DEX lost NXP:LPC1765FBD100KMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G16RC 062E IT: B features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe