Micron Technology DRAM SDRAM-DDR4, Part #MT41K512M16VRP-107 AIT:P TR | Dynamic random access memory | DEX Level 2 Phase module used in GE/Converteam

Phase module used in GE/Converteam Prowind 2

GEC:2375089-2

Output Phases: 1

AOD:8V1-035-654-D

Micron Technology DRAM SDRAM-DDR4, Part #MT41K512M16VRP-107 AIT:P TR | Dynamic random access memory | DEX Level 2 Phase module used in GE/ConverteamThe 8Gb (Twin Die) DDR3L SDRAM (1. 35V) uses two Micron 4Gb DDR3L SDRAM x8 die for a 2 byte x16 device in one package. Features Uses two x8, 4Gb Micron die to make one x16 package Single rank TwinDie One external ZQ ball and one internal ZQ connected to VSSQ through an embedded serial resistor VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture